论文标题
基于过渡金属柜的点接触中的可切换域
Switchable domains in point contacts based on transition metal tellurides
论文作者
论文摘要
我们报告了基于范德华过渡金属（TMTS）的系列电压偏置点触点（PC）的电阻转换，例如mete2（me = mo，w）和tamete4（me = ru，rh，ir）。切换发生在低电阻“金属型”状态（即基态）和高电阻“半导体型”状态之间发生，通过施加一定的偏置电压（<1V），而反向切换则通过施加相反的极性进行反向切换。当强电场（约10kV/cm）修饰晶体结构并控制其极化时，效果的起源可以是通过应用偏置电压在PC芯中形成域。除了发现PC中的开关效果外，我们还建议在功能化之前进行简单的材料测试方法，这在寻找合适的新型物质方面具有很大的优势。在非挥发性电阻随机访问内存（RRAM）工程中，由subsicron杂项结构中可切换域引起的研究TMT的新功能。
We report resistive switching in voltage biased point contacts (PCs) based on series of van der Waals transition metals tellurides (TMTs) such as MeTe2 (Me=Mo, W) and TaMeTe4 (Me= Ru, Rh, Ir). The switching occurs between a low resistive "metallic-type" state, which is the ground state, and a high resistive "semiconducting-type" state by applying certain bias voltage (<1V), while reverse switching takes place by applying voltage of opposite polarity. The origin of the effect can be formation of domain in PC core by applying a bias voltage, when a strong electric field (about 10kV/cm) modifies the crystal structure and controls its polarization. In addition to the discovery of the switching effect in PCs, we also suggest a simple method of material testing before functionalizing them, which offers a great advantage in finding suitable novel substances. The new functionality of studied TMTs arising from switchable domains in submicron hetero-structures that are promising, e.g., for non-volatile resistive random access memory (RRAM) engineering.
