论文标题
纳米结构中的电子G因子：连续培养基和原子方法
Electron g-factor in nanostructures: continuum media and atomistic approach
论文作者
论文摘要
我们报告了$ k $依赖的landé$ g $ factor的研究，由连续媒体近似K.P方法和原子紧密结合SP $^3 $ d $^5 $^5 $ s $^*$接近。我们为INAS提出了一个有效的介观模型，我们能够成功地与非常小和非常大的纳米结构进行原子计算，其中许多原子达到6000万。最后，对于对应于接近零$ g $的纳米结构尺寸，我们报告了电子自旋状态抗跨的抗跨系统，尽管未包括形状 - 抗体和应变效应，但仅仅是由于破坏了阳离子/阴离子的原子对称性，使阳离子/阴离子的对称破坏了该系统。
We report studies of $k$-dependent Landé $g$-factor, performed by both continuous media approximation k.p method, and atomistic tight-binding sp$^3$d$^5$s$^*$ approach. We propose an effective, mesoscopic model for InAs that we are able to successfully compare with atomistic calculations, for both very small and very large nanostructures, with a number of atoms reaching over 60 million. Finally, for nanostructure dimensions corresponding to near-zero $g$-factor we report electron spin states anti-crossing as a function of system size, despite no shape-anisotropy nor strain effects included, and merely due to breaking of atomistic symmetry of cation/anion planes constituting the system.
