论文标题
侵入性金属探针对半导体纳米结构中霍尔测量的影响
Impact of invasive metal probes on Hall measurements in semiconductor nanostructures
论文作者
论文摘要
自下而上增长的最新进展正在引起一系列新的二维纳米结构。霍尔效应测量在其电气表征中起重要作用。但是，尺寸的限制可能会导致设备几何形状，这些几何形状显着偏离具有当前无线接触的伸长厅杆的理想。许多使用这些新材料的设备具有较低的纵横比，并且具有与半导体通道重叠的特征金属厅探针。这可能导致电流流量的大量失真。我们介绍了来自INAS 2D纳米蛋白设备的实验数据，这些设备具有不同的HALL探针几何形状，以研究Hall探针长度和宽度的影响。我们使用有限元模拟来进一步了解这些方面的含义，并扩大范围以接触电阻和样本宽高比。我们的主要发现是，侵入性探针导致测得的霍尔电压的明显低估，通常为40-80％。这反过
Recent advances in bottom-up growth are giving rise to a range of new two-dimensional nanostructures. Hall effect measurements play an important role in their electrical characterization. However, size constraints can lead to device geometries that deviate significantly from the ideal of elongated Hall bars with currentless contacts. Many devices using these new materials have a low aspect ratio and feature metal Hall probes that overlap with the semiconductor channel. This can lead to a significant distortion of the current flow. We present experimental data from InAs 2D nanofin devices with different Hall probe geometries to study the influence of Hall probe length and width. We use finite-element simulations to further understand the implications of these aspects and expand the scope to contact resistance and sample aspect ratios. Our key finding is that invasive probes lead to a significant underestimation in the measured Hall voltage, typically of the order of 40-80%. This in turn leads to a subsequent proportional overestimation of carrier concentration and an underestimation of mobility
