论文标题
基于HGTE的三维拓扑制造剂的带结构
Band structure of a HgTe-based three-dimensional topological insulator
论文作者
论文摘要
通过对回旋共振的分析，我们基于HGTE薄膜实验地获得了三维拓扑绝缘子的带状结构。顶部的门控用于移动膜中的费米水平，使我们能够检测到与表面状态相对的单独的共振模式，在两个相对的膜界面，散装传导带和价带。实验带结构与$ \ Mathbf {k \ cdot p} $模型的预测相当吻合。由于表面和散装带的强杂交，在电子能的广泛范围内，表面状态的分散接近抛物线。
From the analysis of the cyclotron resonance, we experimentally obtain the band structure of the three-dimensional topological insulator based on a HgTe thin film. Top gating was used to shift the Fermi level in the film, allowing us to detect separate resonance modes corresponding to the surface states at two opposite film interfaces, the bulk conduction band, and the valence band. The experimental band structure agrees reasonably well with the predictions of the $\mathbf{k\cdot p}$ model. Due to the strong hybridization of the surface and bulk bands, the dispersion of the surface states is close to parabolic in the broad range of the electron energies.
