论文标题
通过底物表面重构调整在常规半导体上的外延石墨烯的掺杂
Tuning the doping of epitaxial graphene on a conventional semiconductor via substrate surface reconstruction
论文作者
论文摘要
结合扫描隧道显微镜和角度分辨光发射光谱，我们演示了如何通过利用在热退火时自发在GE表面上自发发生的结构变化来调整外延石墨烯从P到N的掺杂。此外，使用第一个原理计算，我们构建了一个成功再现实验观察结果的模型。由于在应用方面修改石墨烯电子性能的能力至关重要，因此我们的结果为将石墨烯与常规半导体的整合做出了重要贡献。
Combining scanning tunneling microscopy and angle-resolved photoemission spectroscopy, we demonstrate how to tune the doping of epitaxial graphene from p to n by exploiting the structural changes that occur spontaneously on the Ge surface upon thermal annealing. Furthermore, using first principle calculations we build a model that successfully reproduces the experimental observations. Since the ability to modify graphene electronic properties is of fundamental importance when it comes to applications, our results provide an important contribution towards the integration of graphene with conventional semiconductors.
