论文标题
离子照射对间隙中相干光语音的脱序的影响
The effect of ion irradiation on dephasing of coherent optical phonons in GaP
论文作者
论文摘要
已经使用基于电磁采样的飞秒泵探针技术研究了离子辐照缝隙中相干纵向光（LO）声子的脱位。发现相干声音的dephasing时间被发现通过Ga-ion辐照引入少量缺陷而大大延长了。在室温下观察到的最大倾向时间为9.1 ps，ga $^{+} $离子剂量为10 $^{13} $/cm $ $^{2} $，其比离子辐照前的间隙的8.3 ps值大得多。通过存在缺陷引起的深度水平的存在来解释较长的时间段时间。
The dephasing of coherent longitudinal optical (LO) phonons in ion-irradiated GaP has been investigated with a femtosecond pump-probe technique based on electro-optic sampling. The dephasing time of the coherent LO phonon is found to be dramatically prolonged by the introduction of a small amount of defects by means of Ga-ion irradiation. The maximum dephasing time observed at room temperature is 9.1 ps at a Ga$^{+}$ ion dose of 10$^{13}$/cm$^{2}$, which is significantly longer than the value of 8.3 ps for GaP before ion irradiation. The longer dephasing time is explained in terms of the suppression of electron-LO-phonon scattering by the presence of defect-induced deep levels.
