论文标题
使用FIN场效应晶体管的公共栅极结构紧凑型旋转Qubit
Compact spin qubits using the common gate structure of fin field-effect transistors
论文作者
论文摘要
商业晶体管的尺寸是纳米级的，并且已经有许多使用常规的互补金属氧化物半导体（CMOS）晶体管提出的自旋Qubits。但是，先前提议的自旋速度需要许多电线来控制少量Qubits。当量子位集成到芯片中时，这会导致重大的“电线丛林”问题。在此，为了减少复杂的接线，我们从理论上考虑嵌入鳍片效果晶体管（FinFET）设备中的自旋Qubt，以使自旋Qubits共享FinFET的公共栅极电极。量子位之间的相互作用通过Ruderman Kittel Kasuya Yosida（rkky）通过FinFET通道进行。紧凑型实施的补偿需要在较小的空间中高密度的电流线。除了当前建议的量子计算机外，还讨论了量子退火机的可能性。
The sizes of commercial transistors are of nanometer order, and there have already been many proposals of spin qubits using conventional complementary metal oxide semiconductor (CMOS) transistors. However, the previously proposed spin qubits require many wires to control a small number of qubits. This causes a significant 'jungle of wires' problem when the qubits are integrated into a chip. Herein, to reduce the complicated wiring, we theoretically consider spin qubits embedded into fin field-effect transistor (FinFET) devices such that the spin qubits share the common gate electrode of the FinFET. The interactions between qubits occur via the Ruderman Kittel Kasuya Yosida (RKKY) interaction via the channel of the FinFET. The compensation for the compact implementation requires high-density current lines in a small space. The possibility of a quantum annealing machine is discussed in addition to the quantum computers of the current proposals.
