论文标题
在过渡金属二甲基元素单层中的传导和价带G因子的测量
Measurement of Conduction and Valence Bands g-factors in a Transition Metal Dichalcogenide Monolayer
论文作者
论文摘要
单层过渡金属二分法中的电子谷和自旋度可以在磁场中进行的光学和传输测量中操纵。在大多数测量中，无法访问Zeeman分裂的关键参数，即电子和孔G因子的单独贡献。在这里，我们提出了一种原始方法，该方法可访问传导和价带对测得的Zeeman拆分的贡献。它利用了激子复合物的光学选择规则，尤其是涉及valley声子的复合物的光学选择规则，避免了强大的重新归一化效应，从而损害了传输实验中单个颗粒G因子的测定。这些研究直接确定单个带G因子。我们测量底部（顶部）导带的GC1 = 0.86，GC2 = 3.84，单层WSE2的价带的GV = 6.1。这些测量值有助于定量解释在磁场中执行的光学和运输测量。此外，测得的G因子是有价值的输入参数，用于优化这些2D材料的频带结构计算。
The electron valley and spin degree of freedom in monolayer transition-metal dichalcogenides can be manipulated in optical and transport measurements performed in magnetic fields. The key parameter for determining the Zeeman splitting, namely the separate contribution of the electron and hole g-factor, is inaccessible in most measurements. Here we present an original method that gives access to the respective contribution of the conduction and valence band to the measured Zeeman splitting. It exploits the optical selection rules of exciton complexes, in particular the ones involving inter-valley phonons, avoiding strong renormalization effects that compromise single particle g-factor determination in transport experiments. These studies yield a direct determination of single band g factors. We measure gc1= 0.86, gc2=3.84 for the bottom (top) conduction bands and gv=6.1 for the valence band of monolayer WSe2. These measurements are helpful for quantitative interpretation of optical and transport measurements performed in magnetic fields. In addition the measured g-factors are valuable input parameters for optimizing band structure calculations of these 2D materials.
