论文标题
抗铁磁MGO限制的MNPT膜中的电压控制的磁各向异性
Voltage-controlled magnetic anisotropy in antiferromagnetic MgO-capped MnPt films
论文作者
论文摘要
使用第一原理计算研究了MGO限制的MNPT膜及其电压控制中的磁各向异性。具有膜厚度的磁各向异性的急剧变化，尤其是在PT终止薄膜中，这表明它可以通过调节膜厚度来广泛调整它。在厚膜中，线性电压控制系数分别为PT端接的和MN终止的接口，高达1.5和$ -0.6 $ PJ/VM。广泛可调的磁各向异性能量和大型电压控制系数的组合表明，MGA覆盖的MNPT膜可以用作磁性记忆和抗fiferromagnonic应用的多功能平台。
The magnetic anisotropy in MgO-capped MnPt films and its voltage control are studied using first-principles calculations. Sharp variation of the magnetic anisotropy with film thickness, especially in the Pt-terminated film, suggests that it may be widely tuned by adjusting the film thickness. In thick films the linear voltage control coefficient is as large as 1.5 and $-0.6$ pJ/Vm for Pt-terminated and Mn-terminated interfaces, respectively. The combination of a widely tunable magnetic anisotropy energy and a large voltage-control coefficient suggest that MgO-capped MnPt films can serve as a versatile platform for magnetic memory and antiferromagnonic applications.
