论文标题
使用Fabry-Perot谐振器的电磁波存储和释放，该谐振器包括光学上可调的metamirror
Storage and release of electromagnetic waves using a Fabry-Perot resonator that includes an optically tunable metamirror
论文作者
论文摘要
我们评估了由电感电感器谐振器组成的光学可调节元原子的瞬时响应，该谐振器装有一块高抗性硅，并执行概念验证实验，以证明使用微小元素中的Meta-ATOM在微波区域中进行电磁波的存储和释放。在元原子中开始激光照明激光照明后，元原子的瞬时时间与入射激光功率成反比。谐振频率下的元原子的透射率增加到10倍，在激光照明启动后，无激光照明在5.2 ns处获得，激光功率为1600 mW，激光点尺寸为2 mm $ $ $ \倍$ $ $ 1毫米，以及447 nmm的激光波长。相反，打开激光照明后的瞬态时间取决于硅的载体寿命，并测量为几十微秒。基于评估元原子的瞬态响应的结果，我们提出了一种使用Fabry-Perot谐振器来存储和释放电磁波的方法，该谐振器将元原子作为其镜子之一。然后，通过用激光光照亮硅原子中的硅，成功释放了在Fabry-Perot谐振器中存储的电磁波。也可以在较高频率区域中使用该方法，因为只要其带隙能高于信号光子能量，只要其带隙的能量高，具有半导体元件的超材料甚至可以用作光学区域的主动超材料。
We evaluate the transient response of an optically tunable meta-atom composed of an electric inductor-capacitor resonator that is loaded with a piece of high-resistivity silicon and perform a proof-of-concept experiment to demonstrate the storage and release of electromagnetic waves using this meta-atom in the microwave region. The transient time of the meta-atom immediately after commencing laser light illumination of the silicon in the meta-atom is found to be inversely proportional to the incident laser power. The transmittance of the meta-atom at the resonance frequency increases to ten times that obtained without laser illumination at 5.2 ns after the start of laser illumination for a laser power of 1600 mW, a laser spot size of 2 mm $\times$ 1 mm, and a laser wavelength of 447 nm. In contrast, the transient time after turning the laser light off is dependent on the carrier lifetime of silicon and is measured to be several tens of microseconds. Based on the results of evaluation of the transient response of the meta-atom, we propose a method for the storage and release of electromagnetic waves using a Fabry-Perot resonator that includes the meta-atom as one of its mirrors. The electromagnetic wave that is stored in the Fabry-Perot resonator for a few tens of nanoseconds is then successfully released by illuminating the silicon in the meta-atom with the laser light. It is also possible to use this method in the higher frequency region because metamaterials with semiconductor elements can even be used as active metamaterials in the optical region as long as their bandgap energy is higher than the signal photon energy.
