论文标题
超薄PTSE $ _2 $电影中的各向同性传导和负面照相
Isotropic conduction and negative photoconduction in ultrathin PtSe$_2$ films
论文作者
论文摘要
PTSE $ _2 $ Ultrathin膜用作后门控型晶体管（FET）的渠道，这些通道在不同的温度和超连续的白色激光照射下进行了研究。温度依赖性行为证实了多层PTSE $ _2 $的半导体性质，具有P型传导，高达40 cm2/（vs）的孔场效应迁移率和显着的栅极调制。沿不同方向测量的电导传导显示各向同性转运。在暴露于光线下，观察到PTSE $ _2 $通道电导的降低。这种负面的光电导率是由Sio $ _2 $和SI/SIO $ _2 $接口引起的光电效应所引起的光电效应。
PtSe$_2$ ultrathin films are used as the channel of back-gated field-effect transistors (FETs) that are investigated at different temperatures and under super-continuous white laser irradiation. The temperature-dependent behavior confirms the semiconducting nature of multilayer PtSe$_2$, with p-type conduction, a hole field-effect mobility up to 40 cm2/(Vs) and significant gate modulation. Electrical conduction measured along different directions shows isotropic transport. A reduction of PtSe$_2$ channel conductance is observed under exposure to light. Such negative photoconductivity is explained by a photogating effect caused by photo-charge accumulation in SiO$_2$ and at the Si/SiO$_2$ interface.
