论文标题
Stanene：拓扑绝缘体和拓扑超导体的好平台
Stanene: A Good Platform for Topological Insulator and Topological Superconductor
论文作者
论文摘要
近年来，近年来已经对二维（2D）拓扑绝缘子（TIS）和拓扑超导体（TSC）进行了深入研究，这是由于其巨大的无耗散电子传输和耐断层量子计算的潜力。在这里，我们专注于石墨烯的锡类似物Stanene，简要回顾了其作为2D TI和TSC的候选人的发展。认为Stanene是具有0.3 eV的较大间隙的Ti，其拓扑特性对各种因素敏感，例如晶格常数，化学功能化和层厚度，这些厚度为相位调谐提供了各种方法。在实验上，最近观察到倒置的差距和边缘状态，这是Ti的有力证据。此外，通过打破反转对称性并支持螺旋大变娜边缘模式，Stanene也被预测是时间逆转不变的TSC。最近，通过运输和扫描隧道显微镜测量值证实了Stanene的层依赖性超导性。这篇评论详细介绍了Stanene及其拓扑特性，并讨论了一些前景。
Two dimensional (2D) topological insulators (TIs) and topological superconductors (TSCs) have been intensively studied for recent years due to its great potential for dissipationless electron transportation and fault-tolerant quantum computing, respectively. Here we focus on stanene, the tin analogue of graphene, to give a brief review of its development as a candidate for both 2D TI and TSC. Stanene is proposed to be a TI with a large gap of 0.3 eV, and its topological properties are sensitive to various factors, e.g., the lattice constants, chemical functionalization and layer thickness, which offer various methods for phase tunning. Experimentally, the inverted gap and edge states are observed recently, which are strong evidence for TI. In addition, stanene is also predicted to be a time reversal invariant TSC by breaking inversion symmetry, supporting helical Majorana edge modes. The layer-dependent superconductivity of stanene is recently confirmed by both transport and scanning tunneling microscopy measurements. This review gives a detailed introduction to stanene and its topological properties and some prospects are also discussed.
