论文标题
MN掺杂的半导体结构中的标志性电子磁化
Sign-reversal electron magnetization in Mn-doped semiconductor structures
论文作者
论文摘要
Mn掺杂$ {\ rm a^{iii} b^v} $半导体结构中各种锰类型及其复合物的多样性导致了许多有趣的现象。在这里，我们表明，普通替代的MN受体和间质MN供体以及供体 - 受体二聚体之间的相互作用可能导致电子磁化的逆转。在我们的全光方案中，通过MN二聚体通过MN二聚体的杂质激发导致电离Mn-Donor $ d $ shell的直接取向。然后通过间质MN捕获光激发电子的电子，并平行于电子旋转与光学方向的$ d $ shell。在低激发方案中，这会产生自旋反转电子磁化。随着激发强度的增加，供体捕获的捕获饱和，并且根据选择规则的规则恢复了异常平均自旋的极化。讨论了通过极化光致发光对电子自旋逆转进行实验性观察的可能性。
The diversity of various manganese types and its complexes in the Mn-doped ${\rm A^{III}B^V}$ semiconductor structures leads to a number of intriguing phenomena. Here we show that the interplay between the ordinary substitutional Mn acceptors and interstitial Mn donors as well as donor-acceptor dimers could result in a reversal of electron magnetization. In our all-optical scheme the impurity-to-band excitation via the Mn dimers results in direct orientation of the ionized Mn-donor $d$ shell. A photoexcited electron is then captured by the interstitial Mn and the electron spin becomes parallel to the optically oriented $d$ shell. That produces, in the low excitation regime, the spin-reversal electron magnetization. As the excitation intensity increases the capture by donors is saturated and the polarization of delocalized electrons restores the normal average spin in accordance with the selection rules. A possibility of the experimental observation of the electron spin reversal by means of polarized photoluminescence is discussed.
