论文标题
在栅极定义的双层石墨烯通道中局部状态的扫描门显微镜
Scanning Gate Microscopy of Localized States in a gate-defined Bilayer Graphene Channel
论文作者
论文摘要
我们使用扫描栅极显微镜证明存在于在封装的双层石墨烯中50nm宽的栅极定义的导电通道中潜在的不均匀性引起的局部状态。当在局部尖端引起的电势的影响下对通道电导进行成像时，我们会观察到增强电导的椭圆与尖端位置的函数。这些椭圆使我们能够推断局部状态的位置，并研究其对位移场的依赖。对于大型位移场，我们观察到局部状态倾向于进入通道中的一半。我们所有的观察结果都可以在随机库仑封锁的框架内得到很好的解释。
We use Scanning Gate Microscopy to demonstrate the presence of localized states arising from potential inhomogeneities in a 50nm-wide, gate-defined conducting channel in encapsulated bilayer graphene. When imaging the channel conductance under the influence of a local tip-induced potential, we observe ellipses of enhanced conductance as a function of the tip position. These ellipses allow us to infer the location of the localized states and to study their dependence on the displacement field. For large displacement fields, we observe that localized states tend to occur halfway into the channel. All our observations can be well explained within the framework of stochastic Coulomb blockade.
