论文标题
巨型拓扑纵向圆形光 - 气效应
Giant topological longitudinal circular photo-galvanic effect in the chiral multifold semimetal CoSi
论文作者
论文摘要
在像DNA和晶体固体一样多样化的系统中发现的引人注目的自然现象背后,没有镜子对称性或手性。当带有拓扑受保护的带归化学的手性半学被圆形极化光照射时,就会发生一个显着的例子。在适当的条件下,在光的偏振逆转(称为圆形光钙化效应)逆转时切换符号的一部分被预测仅取决于基本常数。观察量化的条件是非宇宙的,并且取决于材料参数和入射频率。在这项工作中,我们在手学拓扑半学COSI中使用0.2 eV -1.1 eV的可调光子能进行Terahertz发射光谱。我们确定一个大型纵向光电流达到0.4 eV达到$ \ sim $ 550 $ 550 $μa/v^{2} $的峰值,在文献中报道的任何手性晶体中,它都比光电流大得多。使用第一原理计算,我们确定峰源自拓扑带交叉口,以量化常数为单位达到3.3 $ \ pm $ 0.3。我们的计算表明,掺杂和热载体寿命的增加时,量化的CPGE在COSI中可以触及。较大的光电传导性表明,拓扑半学可能被用作新的中红外探测器。
The absence of mirror symmetry, or chirality, is behind striking natural phenomena found in systems as diverse as DNA and crystalline solids. A remarkable example occurs when chiral semimetals with topologically protected band degeneracies are illuminated with circularly polarized light. Under the right conditions, the part of the generated photocurrent that switches sign upon reversal of the light's polarization, known as the circular photogalvanic effect, is predicted to depend only on fundamental constants. The conditions to observe quantization are non-universal, and depend on material parameters and the incident frequency. In this work, we perform terahertz emission spectroscopy with tunable photon energy from 0.2 eV - 1.1 eV in the chiral topological semimetal CoSi. We identify a large longitudinal photocurrent peaked at 0.4 eV reaching $\sim$ 550 $μA/V^{2}$, which is much larger than the photocurrent in any chiral crystal reported in the literature. Using first-principles calculations we establish that the peak originates from topological band crossings, reaching 3.3$\pm$0.3 in units of the quantization constant. Our calculations indicate that the quantized CPGE is within reach in CoSi upon doping and increase of the hot-carrier lifetime. The large photo-conductivity suggests that topological semimetals could potentially be used as novel mid-infrared detectors.