论文标题
超薄MOS2晶体管的真空表
Vacuum gauge from ultrathin MoS2 transistor
论文作者
论文摘要
我们制造单层MOS2现场效应晶体管，并研究其电力特性，从10^-6 TORR到大气气压。我们表明，晶体管的阈值电压随着增长的压力而增加。因此，我们提出该设备作为气压传感器，表明它特别适合作为低功耗真空表。该设备在影响MOS2通道的N掺杂的情况下作用于压力依赖性的O2，N2和H2O分子吸附。
We fabricate monolayer MoS2 field effect transistors and study their electric characteristics from 10^-6 Torr to atmospheric air pressure. We show that the threshold voltage of the transistor increases with the growing pressure. Hence, we propose the device as an air pressure sensor, showing that it is particularly suitable as a low power consumption vacuum gauge. The device functions on pressure-dependent O2, N2 and H2O molecule adsorption that affect the n-doping of the MoS2 channel.
