论文标题
带有神经形态应用的石墨烯上的CMOS闪存技术的照片MEMTRANSISTOR
Photo memtransistor based on CMOS flash memory technology on Graphene with neuromorphic applications
论文作者
论文摘要
石墨烯对许多不同的未来应用具有巨大的希望，尤其是与静电门控易于调谐的掺杂和费米水平有关的。但是，到目前为止，大多数实现都依赖于通过连续大电压的电掺杂来维持所需的掺杂。我们在这里展示如何使用常规的半导体闪存技术来实现石墨烯，以使可编程掺杂仅通过使用短门脉冲就可以实现。我们还演示了该方法如何用于存储设备，并显示该设备的潜在神经形态功能。最后，我们表明，通过用紫外线辐射照亮设备，可以显着增强整体性能。我们的方法可以为将石墨烯集成到CMOS技术内存应用中铺平道路，而我们的设备设计也可能适合大型神经形态计算结构。
Graphene holds a great promise for a number of diverse future applications, in particular related to its easily tunable doping and Fermi level by electrostatic gating. However, as of today, most implementations rely on electrical doping via the application of continuous large voltages to maintain the desired doping. We show here how graphene can be implemented with conventional semiconductor flash memory technology in order to make programmable doping possible, simply by the application of short gate pulses. We also demonstrate how this approach can be used for a memory device, and also show potential neuromorphic capabilities of the device. Finally, we show that the overall performance can be significantly enhanced by illuminating the device with UV radiation. Our approach may pave the way for integrating graphene in CMOS technology memory applications, and our device design could also be suitable for large scale neuromorphic computing structures.
