论文标题
工程量子辅助缺陷：底物错误在化学蒸气沉积钻石生长中的作用
Engineering quantum-coherent defects: the role of substrate miscut in chemical vapor deposition diamond growth
论文作者
论文摘要
钻石缺陷的工程，尤其是氮呈现（NV）中心，对于量子科学中的许多应用都很重要。基于钻石和原位氮掺杂的化学蒸气沉积（CVD）生长的材料科学方法是通往并优化嵌入式缺陷所需特性的有前途的途径。在此，考虑到嵌入式缺陷的一致性，我们探讨了底物错误对钻石生长速率，氮密度和丘陵缺陷密度的影响，并且我们报告的最佳角度范围在0.66°<θ<θ<1.16°之间，出于工程相干emembles of NV Centers invenmond centermond centermond nv Centers中。我们提供了一个模型，该模型在CVD生长的阶跃状态中定量描述了丘陵成核，从而洞悉了小丘形成物理的见解。我们还报告说，在Hillock缺陷处显着增强了氮的掺入，为用于量子应用的Hillock-Fefect-Fefect-Fefect-Fefect-Fefect-Fefect-Fefect-Fefect-Fefect-Fefect-Fefect-Fefect-Fefect-Fefect-Fefect-Fefect-Fefect-Fefect-Fefect-Fefect-Fefect-Fefect-Fefect-Fectection-fectection添加了定位的NV中心集合以进行量子应用。
The engineering of defects in diamond, particularly nitrogen-vacancy (NV) centers, is important for many applications in quantum science. A materials science approach based on chemical vapor deposition (CVD) growth of diamond and in-situ nitrogen doping is a promising path toward tuning and optimizing the desired properties of the embedded defects. Herein, with the coherence of the embedded defects in mind, we explore the effects of substrate miscut on the diamond growth rate, nitrogen density, and hillock defect density, and we report an optimal angle range between 0.66° < θ < 1.16° for the purposes of engineering coherent ensembles of NV centers in diamond. We provide a model that quantitatively describes hillock nucleation in the step-flow regime of CVD growth, shedding insight on the physics of hillock formation. We also report significantly enhanced incorporation of nitrogen at hillock defects, opening the possibility for templating hillock-defect-localized NV center ensembles for quantum applications.
