论文标题
充电陷阱层启用了阳性可调v $ _ {fb} $ in $β$ -ga -ga $ _ {2} $ o $ $ $ _ {3} $ GATE $ GATE堆栈，用于增强模式晶体管
Charge trap layer enabled positive tunable V$_{fb}$ in $β$-Ga$_{2}$O$_{3}$ gate stacks for enhancement mode transistors
论文作者
论文摘要
$β$ -GA $ _ {2} $ o $ _ {3} $基于增强模式晶体管设计对于实现低损失，高效率下一代动力设备具有基本驾驶电路至关重要。一种在$β$ -ga $ -ga -ga {2} $ o $ $ _ {3} $ Metal-Oxememedductor Adcocitors（Moscaps）中获得高积极平坦的频带电压（V $ _ {fb} $）为10.6 V的高积极的方法。这可以在较大的掺杂范围内实现增强模式操作。优秀的V $ _ {fb} $保留$ {\ sim} $ 97％的10 $^{4} $ s在55 $^{\ circ} $ c $^{\ circ} $ c在电荷捕获后的盖门堆栈展示，从而减少了频繁的充电压力伤害的要求。此外，低门泄漏电流密度（J $ _ {G} $）用于高负门电压（V $ _ {G} $$ {\ sim} $ -60 V）表示该栅极堆栈的潜力在增强模式晶体管中启用了出色的分解特性。
$β$-Ga$_{2}$O$_{3}$ based enhancement mode transistor designs are critical for the realization of low loss, high efficiency next generation power devices with rudimentary driving circuits. A novel approach towards attaining a high positive flat band voltage (V$_{fb}$) of 10.6 V in $β$-Ga$_{2}$O$_{3}$ metal-oxide-semiconductor capacitors (MOSCAPs), with the ability to fine tune it between 3.5 V to 10.6 V, using a polycrystalline AlN charge trap layer has been demonstrated. This can enable enhancement mode operation over a wide doping range. Excellent V$_{fb}$ retention of ${\sim}$97% for 10$^{4}$ s at 55 $^{\circ}$C was exhibited by the gate stacks after charge trapping, hence reducing the requirement of frequent charge injection cycles. In addition, low gate leakage current density (J$_{g}$) for high negative gate voltages (V$_{g}$${\sim}$-60 V) indicates the potential of this gate stack to enable superior breakdown characteristics in enhancement mode transistors.
