论文标题
Mapbi中与缺陷相关的状态
Defect-related states in MAPbI$_3$ halide perovskite single crystals revealed by the photoluminescence excitation spectroscopy
论文作者
论文摘要
Mapbi $ _3 $卤化物钙钛矿单晶在5 K温度下使用光致发光激发光谱进行了研究。确定了两种非相互作用类型的状态：结合的激子和与缺陷相关的状态。在结合激子共振下方的光能激发晶体的激发揭示了复杂的低密度缺陷发射，否则被结合的激子的发射隐藏了。提出了一种分离这些与缺陷相关的发光光谱的方法，并对这种排放状态进行了详尽的研究。这项研究的结果打开了卤化物钙钛矿半导体中低密度缺陷和掺杂剂勘探区域。
The MAPbI$_3$ halide perovskite single crystals are studied at 5 K temperature using the photoluminescence excitation spectroscopy. Two non-interacting types of states are determined: bound excitons and defect-related states. Excitation of the crystal with light energy below the bound exciton resonance reveals the complex low-density defects emission, otherwise hidden by the emission of bound excitons. A way to separate these defect-related luminescence spectra is proposed, and the thorough study of this emission regime is carried out. The results of this study opens an area of low-density defects and dopants exploration in halide perovskite semiconductors.
