论文标题
BALN合金用于增强基于GAN的高电子迁移式晶体管的二维电子气体特性
BAlN alloy for enhanced two-dimensional electron gas characteristics of GaN-based high electron mobility transistor
论文作者
论文摘要
新兴的宽带隙巴尔恩合金具有改进III氮化物功率设备（包括高电子迁移式晶体管（HEMT））的潜力。然而，很少有相关的研究。在这项工作中，我们研究了B0.14AL0.86N合金作为GAN缓冲液与α屏障之间的一部分或全部层中的一部分，在常规GAN的基于GAN的高电子迁移率晶体管（HEMT）中。数值结果表明，通过将传统的ALN Interlayer替换为B0.14AL0.86N Interlayer或B0.14AL0.14AL0.86N/ALN HYBRID INTERAILERALERERALER替换传统的ALN Interlayer，将二维电子气体（2DEG）浓度改善，并将其小的2DEG泄漏到三元层中。因此，可以改善转移特性。饱和电流也可以增强。例如，具有0.5 nm B0.14AL0.86N/0.5 nm ALN ALN混合层层和1 nm B0.14AL0.86N Interlayer的HEMT的饱和电流比Aln Interlayer高5.8％和2.2％。
The emerging wide bandgap BAlN alloys have potentials for improved III-nitride power devices including high electron mobility transistor (HEMT). Yet few relevant studies have been carried. In this work, we have investigated the use of the B0.14Al0.86N alloy as part or entirety of the interlayer between the GaN buffer and the AlGaN barrier in the conventional GaN-based high electron mobility transistor (HEMT). The numerical results show considerable improvement of the two-dimensional electron gas (2DEG) concentration with small 2DEG leakage into the ternary layer by replacing the conventional AlN interlayer by either the B0.14Al0.86N interlayer or the B0.14Al0.86N/AlN hybrid interlayer. Consequently, the transfer characteristics can be improved. The saturation current can be enhanced as well. For instance, the saturation currents for HEMTs with the 0.5 nm B0.14Al0.86N/0.5 nm AlN hybrid interlayer and the 1 nm B0.14Al0.86N interlayer are 5.8% and 2.2% higher than that for the AlN interlayer when VGS-Vth= +3 V.
