论文标题
单层1T-TAS $ _2 $中的类似阻尼的扭矩
Damping-like Torque in Monolayer 1T-TaS$_2$
论文作者
论文摘要
阻尼状的旋转轨道扭矩（SOT）是超速动力自旋逻辑设备的先决条件。在这里，我们仅在导电金属二甲基化（TMD）TAS $ _2 $与Nife（PY）铁磁层相连的一个单一单层中报告了类似阻尼的SOT。发现电荷旋转转换效率为0.25 $ \ pm $ 0.03，并且自旋大厅电导率（2.63 $ \ times $ 10 $^5 $^5 $ \ $ \ frac {\ hbar} {2e} $ $ω^{ - 1} $ m $ m $ m $^{ - 1} $都可以报道到其他tmds。这种大型阻尼状SOT的起源可以在TAS $ _2 $/PY异质结构的界面特性中找到，并且实验发现与密度功能理论计算的结果相辅相成。在我们的研究中证明的类似阻尼状扭矩的优势为设计下一代进行TMD基于低功率的量子记忆设备提供了有希望的途径。
A damping-like spin orbit torque (SOT) is a prerequisite for ultralow power spin logic devices. Here, we report on the damping-like SOT in just one monolayer of the conducting transition metal dichalcogenide (TMD) TaS$_2$ interfaced with a NiFe (Py) ferromagnetic layer. The charge-spin conversion efficiency is found to be 0.25$\pm$0.03 and the spin Hall conductivity (2.63 $\times$ 10$^5$ $\frac{\hbar}{2e}$ $Ω^{-1}$ m$^{-1}$) is found to be superior to values reported for other TMDs. The origin of this large damping-like SOT can be found in the interfacial properties of the TaS$_2$/Py heterostructure, and the experimental findings are complemented by the results from density functional theory calculations. The dominance of damping-like torque demonstrated in our study provides a promising path for designing next generation conducting TMD based low-powered quantum memory devices.
