论文标题

与dzyaloshinskii-Moriya互动的易于平面防fiferromagnet中的域周期性

Domain periodicity in an easy-plane antiferromagnet with Dzyaloshinskii-Moriya interaction

论文作者

Tomasello, Riccardo, Sanchez-Tejerina, Luis, Lopez-Dominguez, Victor, Garesci, Francesca, Giordano, Anna, Carpentieri, Mario, Amiri, Pedram Khalili, Finocchio, Giovanni

论文摘要

抗磁性旋转旋转是一种有前途的新兴范式,可开发高性能计算和通信设备。从理论的角度来看,实施模拟工具很重要,该工具可以支持具有特定属性的特定属性的数据驱动的开发。在这里,我们提出了一项研究,该研究重点是具有易于平面各向异性和界面Dzyaloshinskii-Moriya相互作用(IDMI)的抗铁磁材料。针对完整的数值微磁模拟开发和基准了分析理论,该理论描述了抗铁磁体中基态的主要特性,以及如何从实验测量中估算IDMI。还分析了IDMI对抗铁磁元件的电交换动力学的影响。我们的理论结果可用于设计多末端重金属/抗铁磁铁记忆设备。

Antiferromagnetic spintronics is a promising emerging paradigm to develop high-performance computing and communications devices. From a theoretical point of view, it is important to implement simulation tools that can support a data-driven development of materials having specific properties for particular applications. Here, we present a study focusing on antiferromagnetic materials having an easy-plane anisotropy and interfacial Dzyaloshinskii-Moriya interaction (IDMI). An analytical theory is developed and benchmarked against full numerical micromagnetic simulations, describing the main properties of the ground state in antiferromagnets and how it is possible to estimate the IDMI from experimental measurements. The effect of the IDMI on the electrical switching dynamics of the antiferromagnetic element is also analyzed. Our theoretical results can be used for the design of multi-terminal heavy metal/antiferromagnet memory devices.

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