论文标题

用石墨烯量子大厅电阻阵列实现5 h/e^2

Realization of 5 h/e^2 with graphene quantum Hall resistance array

论文作者

Park, Jaesung, Kim, Wan-Seop, Chae, Dong-Hun

论文摘要

我们报告了使用碳化硅上的外延石墨烯制造的10个量子霍尔设备的实现。用电阻桥的精确测量表明,在填充因子2处跨阵列的量化大厅电阻在测量不确定性内的5 h/e^2相当于大约4 10-8。阵列的量子孔相图表明,在6 t的磁场和4 K的温度下,可以实现5 h/e^2的计量量化。该实验证明了在放松的实验条件下在各种范围内及时无法改变的抗性参考的可能性。

We report on realization of 10 quantum Hall devices in series fabricated using epitaxial graphene on silicon carbide. Precision measurements with a resistance bridge indicates that the quantized Hall resistance across an array at filling factor 2 is equivalent to 5 h/e^2 within the measurement uncertainty of approximately 4 10-8. A quantum-Hall phase diagram for the array shows that a metrological quantization of 5 h/e^2 can be achieved at the magnetic field of 6 T and temperature of 4 K. This experiment demonstrates the possibility of timely unchangeable resistance reference in various ranges in relaxed experimental conditions.

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