论文标题

通过与相邻介电层匹配的电容,对铁电的负电容稳定的模型和实验证据的批判性分析

A critical analysis of models and experimental evidence of negative capacitance stabilization in a ferroelectric by capacitance matching to an adjacent dielectric layer

论文作者

Kittl, J. A., Locquet, J. -P., Houssa, M., Afanasiev, V. V.

论文摘要

我们通过电容与介电层匹配的电容(FE)层中负电容(NC)稳定模型的基础进行了详尽的分析,该电容声称该概念在没有Fe偏振(非偏转开关)的情况下稳定在低极化状态下,表明该概念在根本上是根本上完整的和无斑点的。我们还分析了实验证据,得出的结论是没有数据支持这种稳定的需求。相反,铁电偏振开关的常规模型足以说明观察到的效果。我们分析了实验证据,至少在某些已声称这种效果的模型系统中,明确排除了稳定的非开关NC。最近发表的微观测量值支持非开关稳定的NC实际上排除了它们,因为发现夹在两个介电层之间的堆栈中的铁电是在混合域状态(每个域内的高极性化),而不是通过未开关稳定的NC模型所预测的低极化状态。尽管如此,由于稳定​​的NC(对应于自由能的最小值)并非物理上不可能,因此将研究工作转移到研究这种效果的情况和预期的情况和系统中,并评估它们是否对低功率电子产品有用和实用,这将是有用的。

We present a thorough analysis of the foundations of models of stabilization of negative capacitance (NC) in a ferroelectric (FE) layer by capacitance matching to a dielectric layer, which claim that the FE is stabilized in a low polarization state without FE polarization switching (non-switching), showing that the concept is fundamentally flawed and unphysical. We also analyze experimental evidence concluding that there is no data supporting the need to invoke such stabilization; rather, conventional models of ferroelectric polarization switching suffice to account for the effects observed. We analyze experimental evidence that at least in some of the model systems for which this effect has been claimed, categorically rule out stabilized non-switching NC. Microscopic measurements recently published as supporting non-switching stabilized NC actually rule them out, since the ferroelectric in a stack sandwiched between two dielectric layers was found to be in a mixed domain state (high polarizations within each domain) rather than in the low polarization state predicted by non-switching stabilized NC models. Nonetheless, since stabilized NC (corresponding to a minimum in free energy) is not physically impossible, it would be useful to move the research efforts to investigating scenarios and systems in which this effect is possible and expected and assess whether they are useful and practical for low power electronics.

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