论文标题
多晶硅上的铂硅硅质的低温形成
Low-temperature formation of platinum silicides on polycrystalline silicon
论文作者
论文摘要
使用X射线光电学光谱，高分辨率透射透射电子显微镜和X射线衍射仪研究，在PT磁子溅射和不同温度下进行多晶Si的铂硅膜中的相形成和过渡。在PT层下方的Poly-Si上，显示出在室温的PT沉积过程中，显示出非晶态和多晶PT $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2的阶段。界面膜的放松和PT $ _3 $ si中的部分转换在Pt $ _2 $ _2 $ si中，由于热处理在温度范围内30分钟内发生了300至300 $^{\ circ} $ c。 PT $ _3 $ SI和PT $ _2 $ SI阶段由于在同一时间段内从320至480 $^{\ circ} $ C的温度从320到480 $^{\ circ} $ c结晶到PTSI。
Phase formation and transitions in platinum silicide films on polycrystalline Si in the process of Pt magnetron sputtering and heat treatments at different temperatures are studied using X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and X-ray diffractometry. Phases of amorphous and polycrystalline Pt$_3$Si and Pt$_2$Si are shown to form during the room-temperature Pt deposition on poly-Si beneath the Pt layer. The relaxation of the interfacial film and partial transformation of Pt$_3$Si into Pt$_2$Si occurs as a result of the thermal treatment for 30 minutes in the temperature range from 125 to 300$^{\circ}$C. The Pt$_3$Si and Pt$_2$Si phases crystallize to PtSi due to annealing at the temperatures from 320 to 480$^{\circ}$C for the same time period.
