论文标题
P型无定形锗（A-GE）中的电传导机理的研究用作GE检测器的A-GE接触
Investigation of the Electrical Conduction Mechanisms in P-type Amorphous Germanium (a-Ge) Used as a-Ge Contacts for Ge Detectors
论文作者
论文摘要
实验研究了无序物质系统中的电导机制，用于用于高纯度GE检测器接触的P型无定形锗（A-GE）。使用从三个高纯度平面GE检测器测得的表面泄漏电流确定A-GE中的定位长度和跳跃参数。对于高纯度GE Planar探测器的电气接触材料，获得了与温度有关的跳跃距离和跳高能量。结果，我们发现A-GE中的跳跃能量随温度的增加而增加，而A-GE的跳跃距离随着温度的升高而降低。 A-GE的定位长度为$ 2.13^{ - 0.05} _ {+0.07} a^\ circ $至$ 5.07^{ - 0.83} _ {+2.58} a^\ circ $，取决于频带范围内的Fermi能量水平附近的状态密度。使用这些参数，我们预测，具有A-GE触点的GE检测器的表面泄漏电流可能比氦气温度下的一个Yocto放大器（YA）小得多，适用于罕见的事实物理搜索。
Electrical conduction mechanisms in the disordered material system is experimentally studied for p-type amorphous germanium (a-Ge) used for high-purity Ge detector contacts. The localization length and the hopping parameters in a-Ge are determined using the surface leakage current measured from three high-purity planar Ge detectors. The temperature-dependent hopping distance and hopping energy are obtained for a-Ge fabricated as the electrical contact materials for high-purity Ge planar detectors. As a result, we find that the hopping energy in a-Ge increases as temperature increases while the hopping distance in a-Ge decreases as temperature increases. The localization length of a-Ge is on the order of $2.13^{-0.05}_{+0.07} A^\circ$ to $5.07^{-0.83}_{+2.58}A^\circ$, depending on the density of states near the Fermi energy level within bandgap. Using these parameters, we predict that the surface leakage current from a Ge detector with a-Ge contacts can be much smaller than one yocto amp (yA) at helium temperature, suitable for rare-event physics searches.
