论文标题
无缺陷的轴向堆放GAAS/GAASP纳米线量子点具有较强的载体限制
Defect-Free Axially-Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement
论文作者
论文摘要
纳米线（NWS）中的轴向堆叠量子点（QD）在制造纳米级量子器件和激光器中具有重要的应用。尽管他们的性能对晶体质量和结构非常敏感，但对于无AU的模式和结构优化，对无缺陷生长的研究相对较少，以实现高性能。在这里，我们报告了第一个自催化的无轴向堆叠的深NWQD的详细研究。将50个GAAS QD放置在单个GAASP NW中时，保持高结构质量。 QD具有非常清晰的界面（1.8〜3.6 nm），并且可以用非常相似的结构特性紧密堆叠。它们表现出最深的载体限制（〜90 MeV），并且在非硝酸盐IIII-V NWQD中表现出最大的激子 - 贝孔分裂（〜11 MEV），并且由于出色的稳定性，在环境大气中存储了6个月以上，可以保持良好的光学特性。我们的研究为与CMOS Technologies兼容的轴向堆叠的NWQD设备构建了坚实的基础。
Axially-stacked quantum dots (QDs) in nanowires (NWs) have important applications in fabricating nanoscale quantum devices and lasers. Although their performances are very sensitive to crystal quality and structures, there is relatively little study on defect-free growth with Au-free mode and structure optimisation for achiving high performances. Here, we report a detailed study of the first self-catalyzed defect-free axially-stacked deep NWQDs. High structural quality is maintained when 50 GaAs QDs are placed in a single GaAsP NW. The QDs have very sharp interfaces (1.8~3.6 nm) and can be closely stacked with very similar structural properties. They exhibit the deepest carrier confinement (~90 meV) and largest exciton-biexciton splitting (~11 meV) among non-nitride III-V NWQDs, and can maintain good optical properties after being stored in ambient atmosphere for over 6 months due to excellent stability. Our study sets a solid foundation to build high-performance axially-stacked NWQD devices that are compatible with CMOS technologies.
