论文标题
人体厚度和散射对以原子模式近似建模的III-V三重异质结的FIN-TFET的影响
Impact of body thickness and scattering on III-V triple heterojunction Fin-TFET modeled with atomistic mode space approximation
论文作者
论文摘要
最初提出了三重杂联TFET来解决TFET的低电流挑战。由于存在量子井和强散射，因此在此类设备中的载体运输变得复杂。因此，需要完整的频带原子化方法，包括散射，以准确地对载体进行建模。但是，对于具有现实维度的设备的这种模拟在计算上是不可行的。为了减轻此问题，我们采用了经验性的紧密结合模式近似值来模拟三重异质结TFET，其身体厚度最高为12 nm。使用该模型优化了三重杂联TFET设计，以在逼真的散射条件下实现低于60MV/DEC的转移特征。
The triple heterojunction TFET has been originally proposed to resolve TFET's low ON-current challenge. The carrier transport in such devices is complicated due to the presence of quantum wells and strong scattering. Hence, the full band atomistic NEGF approach, including scattering, is required to model the carrier transport accurately. However, such simulations for devices with realistic dimensions are computationally unfeasible. To mitigate this issue, we have employed the empirical tight-binding mode space approximation to simulate triple heterojunction TFETs with the body thickness up to 12 nm. The triple heterojunction TFET design is optimized using the model to achieve a sub-60mV/dec transfer characteristic under realistic scattering conditions.
