论文标题
熔融载体密度，迁移率和塞贝克系数的融化块Znga2O4单晶
Charge carrier density, mobility and Seebeck coefficient of melt-grown bulk ZnGa2O4 single crystals
论文作者
论文摘要
熔体生长的电荷载体密度，迁移率和锯齿状系数的温度依赖性在10 K和310 K之间测量。室温下的电导率约为s = 286 s/cm，这是由于n = 3.26*10^（19）cm^（19）cm^（19）cm^（-3）的高电子浓度引起的，由IN n niminn dof。室温下的活动能力为MU = 55 cm^2/vs，而电离杂质上的散射限制了MU = 62 cm^2/vs的迁移率低于180K。Seebeck系数相对于室温下的铝相对于室温是S_（ZNGA2O4-AL）=（Znga2O4-Al）=（Znga2O4-Al）=（-125+-125+-2）MUV/-12）半导体。在低温下，由于声子阻力效应，我们观察到最大的Seebeck系数。
The temperature dependence of the charge carrier density, mobility and Seebeck coefficient of melt-grown, bulk ZnGa2O4 single crystals was measured between 10 K and 310 K. The electrical conductivity at room temperature is about s = 286 S/cm due to a high electron concentration of n = 3.26*10^(19) cm^(-3), caused by unintenional doping. The mobility at room temperature is mu = 55 cm^2/Vs, whereas the scattering on ionized impurities limits the mobility to mu =62 cm^2/Vs for temperatures lower than 180 K. The Seebeck coefficient relative to aluminum at room temperature is S_(ZnGa2O4-Al) = (-125+-2) muV/K and shows a temperature dependence as expected for degenerate semiconductors. At low temperatures, around 60 K we observed a maximum of the Seebeck coefficient due to the phonon drag effect.
