论文标题
等离子terahertz光谱仪
Plasmonic FET Terahertz Spectrometer
论文作者
论文摘要
我们表明，SI MOSFET，Algan/Gan Hemts，Algaas/Ingaas Hemts和P-Diamond Fets具有特征尺寸的FET，范围为20 nm至130 nm，在室温下，频率范围从120 GHz的THZ光谱仪在室温下可在120 GHz的THz光谱仪中运行，从而与晶体相对应的不同特征和不同特征尺寸的晶体相对应的型号和较小的型号。光谱仪使用具有可互换源的对称FET，并在源和漏极之间的校正THZ电压与漏极的电流与耗尽的漏极，与由THZ信号诱导的电压和闸门供电和栅极源之间的thz信号诱导的电压之间的相位成比例。可以通过使用不同的天线对源对门和排水门接触或使用引入相移的延迟线，甚至通过操纵两个天线的撞击角来创建此相位差。使用在香料和广告中实现的多段统一电荷控制模型模拟光谱仪，并考虑电子惯性效应以及分布式通道电阻，电容和DRUDE电感。
We show that Si MOSFETs, AlGaN/GaN HEMTs, AlGaAs/InGaAs HEMTs, and p-diamond FETs with feature sizes ranging from 20 nm to 130 nm could operate at room temperature as THz spectrometers in the frequency range from 120 GHz to 9.3 THz with different subranges corresponding to the transistors with different features sizes and tunable by the gate bias. The spectrometer uses a symmetrical FET with interchangeable source and drain with the rectified THz voltage between the source and drain being proportional to the sine of the phase shift between the voltages induced by the THz signal between gate-to-drain and gate-to-source. This phase difference could be created by using different antennas for the source-to-gate and drain-to gate contacts or by using a delay line introducing a phase shift or even by manipulating the impinging angle of the two antennas. The spectrometers are simulated using the multi-segment unified charge control model implemented in SPICE and ADS and accounting for the electron inertia effect and the distributed channel resistances, capacitances and Drude inductances.
