论文标题
用于加速寿命测试的电源自行车测试台，用于在极端海上环境中对SIC-MOSFET的可靠性评估
Power Cycling Test Bench for Accelerated Life Testing for Reliability Assessment of SiC-MOSFET in Extreme Offshore Environment
论文作者
论文摘要
当考虑到下井下应用中的电力电子转换器中的重要作用时，功率半导体开关的可靠性很重要。对材料科学的技术进步的尊重，已经提出了具有宽带隙材料的功率MOSFET，例如碳化硅（SIC）和硝酸盐（GAN），作为现有硅（SI）MOSFETS和IGBTS的替代方案。但是，在用现有的Si-MoSFET和IGBT代替SIC-MOSFET之前，应进行可靠性分析。由于用于加速生命测试的实验测试设置的昂贵设备，因此应在实施实际硬件之前使用良好的可靠且基于基于仿真的测试台测试生命测试程序。因此，本文介绍了一个功率周期（PC）测试台，用于加速生命测试，以评估苛刻的海上环境中SIC-MOSFET的可靠性评估。引入的测试工作台是基于SIMSCAPE和LTSpice中的电源开关的模拟，并已通过Cree的1.2 kV SIC-MOSFET的数据表验证。还显示了初步硬件电路以进行进一步的实验测试。设想了来自不同环境温度的设备（DUT）的捕获的数据，并提供有关功率设备的故障机制和终生特征的关键信息。 SIC-MOSFET提供的寿命特征数据可用于从统计上估算实际应用中的组件的剩余寿命（RUL），例如井下电动机驱动器。
The reliability of power semiconductor switches is important when considering their vital role in power electronic converters for downhole subsea applications. Respect to technology advancements in material sciences, power MOSFETs with wide band gap materials have been proposed such as silicon carbide (SiC) and gallium nitride (GaN) as an alternative to existing silicon (Si) based MOSFETs and IGBTs. However, reliability analysis should be performed before substituting SiC-MOSFETs in the place of existing Si-MOSFETs and IGBTs. Due to costly equipment of experimental test setup for accelerated life test, a good reliable and precise simulation-based test bench should be used to test the life test procedure before implementing actual hardware. Therefore, this paper introduces a power cycle (PC) test bench for accelerated life testing for reliability assessment of SiC-MOSFET in harsh offshore environment. The introduced test bench is a simulation-based of power switch in SimScape and LTspice and has been validated with datasheet of 1.2 kV SiC-MOSFET, CAS300M12BM2 by CREE. Preliminary hardware circuits are also shown for further experimental tests. The captured data from the Device-Under-Test (DUT) in different ambient temperatures are envisioned and provide critical information about the failure mechanisms and lifetime characteristics of power devices. The provided lifetime characteristics data of SiC-MOSFET can be used to statistically estimate the Remaining-Useful-Lifetime (RUL) of component in a real application such as downhole motor drives.
