论文标题
轨道切绝缘子中的电压控制的磁反转
Voltage-Controlled Magnetic Reversal in Orbital Chern Insulators
论文作者
论文摘要
Chern绝缘子铁磁体的特征是量化的异常霍尔效应，到目前为止，在磁掺杂的拓扑绝缘子（MTI）薄膜和双层石墨烯Moir {é} Superlattices中已经在实验中鉴定出来。我们将Chern绝缘子铁磁体分类为旋转或轨道，具体取决于轨道磁化是由自发性自旋极化与自旋轨道相互作用（如MTI中的MTI情况）相结合的，还是直接来自MOIR {é} suprattice suprattice case。我们认为，在给定的磁性状态下，例如以异常霍尔效应的迹象进行特征，轨道Chern绝缘子的磁化通常会与弱$ n $和弱$ p $静电或化学掺杂的迹象相反。该特性在存在固定磁场的情况下实现磁态的纯电气开关。
Chern insulator ferromagnets are characterized by a quantized anomalous Hall effect, and have so far been identified experimentally in magnetically-doped topological insulator (MTI) thin films and in bilayer graphene moir{é} superlattices. We classify Chern insulator ferromagnets as either spin or orbital, depending on whether the orbital magnetization results from spontaneous spin-polarization combined with spin-orbit interactions, as in the MTI case, or directly from spontaneous orbital currents, as in the moir{é} superlattice case. We argue that in a given magnetic state, characterized for example by the sign of the anomalous Hall effect, the magnetization of an orbital Chern insulator will often have opposite signs for weak $n$ and weak $p$ electrostatic or chemical doping. This property enables pure electrical switching of a magnetic state in the presence of a fixed magnetic field.
