论文标题
大量N掺杂的PBS量子点固体的尺寸和温度依赖性和温度的光学研究
Size and temperature dependent intraband optical studies of heavily n-doped PbS quantum dot solids
论文作者
论文摘要
通过重掺杂，稳态访问胶体量子点（CQD）中的内标跃迁，可以利用带隙以下能量的电磁频谱。 CQD内注光电子学为廉价中型和长波长红外光电视和发光设备开辟了一条新的途径，这些设备如今主要采用外延材料。作为最近的实验研究领域，仍然缺乏对CQD中标本内转变的基本特性的彻底研究。在这项工作中，我们研究了大量N掺杂的PBS量子点（QD）膜中标记过渡的大小和温度依赖性。我们测量内映过渡的吸收系数为$ 10^4 $ cm $^{ - 1} $的顺序，这与带间吸收系数的值相当。此外，我们确定了映射过渡的振荡器强度的尺寸依赖性。与频带间跃迁的正相反，我们证明了在温度下的映射能量对温度的负依赖性。
Steady-state access to intraband transitions in colloidal quantum dots (CQDs), via heavy doping, allows exploiting the electromagnetic spectrum at energies below the band gap. CQD intraband optoelectronics opens up a new path to cheap mid- and long-wavelength infrared photodetectors and light-emitting devices, which today employ mostly epitaxial materials. As a recent field of experimental research, thorough studies of the basic properties of intraband transitions in CQDs are still lacking. In this work, we investigate the size and temperature dependence of the intraband transition in heavily n-doped PbS quantum dot (QD) films. We measure the absorption coefficient of the intraband transition to be in the order of $10^4$ cm$^{-1}$, which is comparable to the value of the interband absorption coefficient. Additionally, we determine the size-dependence of the oscillator strength of the intraband transition. We demonstrate a negative dependence of the intraband energy with temperature, in contrast to the positive dependence of the interband transition.
