论文标题

二氧化钒开关通道的电导率

Electrical conductivity of vanadium dioxide switching channel

论文作者

Pergament, Alexander, Boriskov, Petr, Kuldin, Nikolai, Velichko, Andrei

论文摘要

在宽温度范围内(15-300 K)研究了二氧化钒薄膜夹层结构的开关通道的电导率。结果表明,在高温区域(高于70 K)中,通道的电阻随温度为R〜EXP(AT-B/T)而变化。从小极化子跳传导理论的角度讨论了实验结果,该理论考虑了热晶格振动对谐振积分的影响。

The electrical conductivity of the switching channel of vanadium dioxide thin-film sandwich structures is studied over a wide temperature range (15-300 K). It is shown that the electrical resistance of the channel varies with temperature as R~exp(aT-b/T) in the high-temperature region (above 70 K). The experimental results are discussed from the viewpoint of the small polaron hopping conduction theory which takes into account the influence of thermal lattice vibrations onto the resonance integral.

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